Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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丝印：K6A65W；Package：K6A65W；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.85 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.18 mA)

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丝印：K6A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)

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无源晶振

KYX

凯越翔电子

无源晶振

KYX

凯越翔电子

无源晶振

KYX

凯越翔电子