丝印：K6A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)

文件：275.42 Kbytes 页数：9 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.7Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.52 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 6 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 800 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

Single-Phase Single In-Line Bridge Rectifiers

文件：95.93 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Single-Phase Single In-Line Bridge Rectifiers

FEATURES • UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 1500 VRMS • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APP

文件：97.5 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司