丝印：K6A65W；Package：K6A65W；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.85 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.18 mA)

文件：385.28 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

文件：288.88 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 5.8 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V ;

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SiC Schottky Barrier Diode

文件：154.59 Kbytes 页数：5 Pages

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SiC Schottky Barrier Diode

文件：277.13 Kbytes 页数：6 Pages

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