首页 >K4T51083QN-BI>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbE-dieDDR2SDRAMSpecification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomply | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbG-dieDDR2SDRAMSpecification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures •JEDECstan | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbG-dieDDR2SDRAMSpecification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures •JEDECstan | SamsungSamsung semiconductor 三星三星半导体 | Samsung |
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