Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in 6-pin package. FEATURES • Switching Time - Typ. 3ms • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100 (at IF=10mA, VCE=10V) • Electrical Isolation

文件：157.99 Kbytes 页数：3 Pages

KODENSHI

可天士

Photocoupler

These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in 6-pin package.FEATURES\n• Switching Time - Typ. 3ms\n• Collector-Emitter Voltage : Min.30V\n• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V)\n• Electrical Isolation Voltage : A • Switching Time - Typ. 3ms\n• Collector-Emitter Voltage : Min.30V\n• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V)\n• Electrical Isolation Voltage : AC2500Vrms\n• UL Recognized File No. E107486;

Kodenshi-AUK

Property of Lite-On Only

Features • High current transfer ratio (CTR : MIN.100 at IF=10mA, VCE=10V) • Response time (ton : TYP, 3 s at VCE=10V, IC=2mA, RL=100 ) • Input-output isolation voltage : LTV-4N35(Viso : 3,550Vrms) LTV-4N37(Viso : 1,550Vrms) • UL approved (No. E113898) • TUV approved (No.R9653630) •

文件：269.2 Kbytes 页数：9 Pages

LITEON

光宝科技

6-Pin DIP Optoisolators Transistor Output

The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratio — 100 Minimum @ Specified Conditions • Guaranteed Switching Speeds • Meets or Exceeds All JEDEC Registered Specifications Applica

文件：140.11 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

GENERAL PURPOSE TYPE PHOTOCOUPLER

文件：148.83 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普