2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

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2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：1.18305 Mbytes 页数：46 Pages

Samsung

三星