首页 >K4S161622D>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
K4S161622D | 512K x 16Bit x 2 Banks Synchronous DRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | |
512K x 16Bit x 2 Banks Synchronous DRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
512K x 16Bit x 2 Banks Synchronous DRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
512K x 16Bit x 2 Banks Synchronous DRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
512K x 16Bit x 2 Banks Synchronous DRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
512K x 16Bit x 2 Banks Synchronous DRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 16 SDRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 16 SDRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 16 SDRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 16 SDRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 16 SDRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 16 SDRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1Mx16SDRAM GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1Mx16SDRAM GENERALDESCRIPTION TheK4S161622Eis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepos | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1Mx16SDRAM GENERALDESCRIPTION TheK4S161622Eis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepos | SamsungSamsung Group 三星三星半导体 | Samsung | ||
16MbH-dieSDRAMSpecification SDRAM16MbH-die(x16) 512Kx16Bitx2BanksSDRAM GENERALDESCRIPTION TheK4S161622His16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecycle | SamsungSamsung Group 三星三星半导体 | Samsung |
详细参数
- 型号：
K4S161622D
- 制造商：
SAMSUNG
- 制造商全称：
Samsung semiconductor
- 功能描述：
512K x 16Bit x 2 Banks Synchronous DRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
0135+ |
TSOP |
1532 |
原包原盒现货可订货价格优势 |
询价 | ||
SAMAUNG |
23+ |
TSOP |
9526 |
询价 | |||
SAM |
06+ |
TSOP |
1000 |
自己公司全新库存绝对有货 |
询价 | ||
SAMSUNG |
23+ |
TSOP/50 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
SAMSUNG |
23+ |
标准封装 |
18000 |
询价 | |||
SAMSUN |
2020+ |
TSSOP-5 |
333 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
SAMSUMG |
2017+ |
SMD |
12589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
SAMSUNG |
22+ |
TSOP-50 |
4650 |
询价 | |||
SAMSUNG |
1305+ |
原装假一赔十 |
12000 |
公司特价原装现货 |
询价 | ||
SAMSUNG |
2022 |
TSOP |
5280 |
原厂原装正品,价格超越代理 |
询价 |
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