512K x 16Bit x 2 Banks Synchronous DRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：1.12762 Mbytes 页数：41 Pages

Samsung

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1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

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1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星

1M x 16 SDRAM

GENERAL DESCRIPTION The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：680.82 Kbytes 页数：43 Pages

Samsung

三星