512Mbit gDDR2 SDRAM

GENERAL DESCRIPTION The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply with the following key gDDR2 SDRA

文件：1.42025 Mbytes 页数：64 Pages

Samsung

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512Mbit gDDR2 SDRAM

GENERAL DESCRIPTION The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply with the following key gDDR2 SDRA

文件：1.42025 Mbytes 页数：64 Pages

Samsung

三星

512Mbit gDDR2 SDRAM

GENERAL DESCRIPTION The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply with the following key gDDR2 SDRA

文件：1.42025 Mbytes 页数：64 Pages

Samsung

三星

512Mbit gDDR2 SDRAM

GENERAL DESCRIPTION The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply with the following key gDDR2 SDRA

文件：1.42025 Mbytes 页数：64 Pages

Samsung

三星

512Mbit gDDR2 SDRAM

GENERAL DESCRIPTION The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply with the following key gDDR2 SDRA

文件：1.42025 Mbytes 页数：64 Pages

Samsung

三星

512Mbit gDDR2 SDRAM

Samsung

三星