首页 >K4H511638C-UCCC>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

K4H511638D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H511638F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

K4H511638F-LC/LCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H511638F-LCSLASHLCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H511638G

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

K4H511638G

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4H511638C-UCCC

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    512Mb C-die DDR SDRAM Specification

供应商型号品牌批号封装库存备注价格
SAMSUNG
2021+
TSOP
6800
原厂原装,欢迎咨询
询价
SAMSUNG/三星
23+
TSOP-66
25000
全新原装现货,假一赔十
询价
SAMSUNG
24+
TSOP
3840
询价
SAM
23+
TSOP
28610
询价
SAMSUNG
24+
TSSOP-66
4650
询价
SAMSUNG
2016+
TSOP
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
SAMSUNG
2016+
TSOP
6523
只做进口原装现货!假一赔十!
询价
SAMSUNG
TSOP
450
正品原装--自家现货-实单可谈
询价
SAMSUNG
23+
TSOP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
SAMSUNG
23+
TSSOP
8650
受权代理!全新原装现货特价热卖!
询价
更多K4H511638C-UCCC供应商 更新时间2025-7-14 14:00:00