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K4H511638F

Consumer Memory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638F

512Mb F-die DDR SDRAM Specification

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638F-LC/LB3

512Mb F-die DDR SDRAM Specification

ConsumerMemory

SamsungSamsung Group

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Samsung

K4H511638F-LC/LCC

512Mb F-die DDR SDRAM Specification

ConsumerMemory

SamsungSamsung Group

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Samsung

K4H511638

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H511638B-G

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H511638B-GC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H511638B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H511638C-UC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H511638C-UCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638C-ULCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

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Samsung

K4H511638C-Z

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638C-ZLCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638D

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638D

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638D

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

Samsung

详细参数

  • 型号:

    K4H511638F

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    512Mb F-die DDR SDRAM Specification

供应商型号品牌批号封装库存备注价格
23+
TSOP66
19694
专注原装正品现货特价中量大可定
询价
SAMSUNG
23+
标准封装
18000
询价
Samsung
09+
20000
询价
SAMSUN
08+
TSOP66
316
全新原装进口自己库存优势
询价
SAMSUN
23+
TSOP
5500
现货,全新原装
询价
SAMSUNG
1625+
DIP
10000
要原装货就来电话,散新请绕道!
询价
SAMSUNG
17+
TSOP
6200
100%原装正品现货
询价
SAMSUNG
2020+
TSSOP66
400
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSUNG
2017+
TSSOP
54785
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
SAMSUNG
16+
QFP
4000
进口原装现货/价格优势!
询价
更多K4H511638F供应商 更新时间2024-4-28 16:29:00