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K4H511638B-TLA0中文资料三星数据手册PDF规格书
相关芯片规格书
更多- K4H511638A-TCB0
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- K4H511638A-TLB0
- K4H511638B-TCB0
- K4H511638B-TCA0
- K4H511638A-TCA2
- K4H511638B-TC/LB3
- K4H511638B-TC/LB0
- K4H511638B-TC/LA2
- K4H511638B-GC/LB3
- K4H511638B-GC/LCC
- K4H511638B-GC/LB0
- K4H511638B-GC/LA2
- K4H511638B-TC/LCC
- K4H511638A-TLA2
- K4H511638B-G
- K4H511638B-GCSLASHLA2
K4H511638B-TLA0规格书详情
特性 Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
产品属性
- 型号:
K4H511638B-TLA0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
128Mb DDR SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
2025+ |
TSOP-66 |
3550 |
全新原厂原装产品、公司现货销售 |
询价 | ||
SAMSUNG/三星 |
TSOP66 |
125000 |
一级代理原装正品,价格优势,长期供应! |
询价 | |||
SAMSUNG |
25+23+ |
TSSOP66 |
21720 |
绝对原装正品全新进口深圳现货 |
询价 | ||
SAMSUNG |
23+ |
TSOP66 |
2881 |
原厂原装正品 |
询价 | ||
SAMSUNG |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
SAMSUNG |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
SAMSUNG |
2016+ |
TSSOP66 |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
SAMSUNG |
05+ |
BGA |
6800 |
全新原装进口自己库存优势 |
询价 | ||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
SAMSUNG |
24+ |
TSOP |
4650 |
询价 |