首页>K4H511638B-TCA0>规格书详情
K4H511638B-TCA0中文资料三星数据手册PDF规格书
相关芯片规格书
更多- K4H511638B-TC/LCC
- K4H511638B-TC/LB3
- K4H511638B-TC/LB0
- K4H511638B-TC/LA2
- K4H511638B-GCSLASHLCC
- K4H511638B-GCSLASHLB3
- K4H511638B-GCSLASHLB0
- K4H511638B-GCSLASHLA2
- K4H511638B-GC/LCC
- K4H511638B-GC/LB3
- K4H511638B-GC/LB0
- K4H511638B-GC/LA2
- K4H511638B-G
- K4H511638A-TLB0
- K4H511638A-TLA2
- K4H511638A-TLA0
- K4H511638A-TCB0
- K4H511638A-TCA2
K4H511638B-TCA0规格书详情
特性 Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
产品属性
- 型号:
K4H511638B-TCA0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
128Mb DDR SDRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
QFP |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
SAMSUNG |
23+ |
TSSOP |
7000 |
询价 | |||
SAMSUNG |
2023+ |
SMD |
11927 |
安罗世纪电子只做原装正品货 |
询价 | ||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
SAMSUNG/三星 |
21+ |
TSSOP |
10000 |
原装现货假一罚十 |
询价 | ||
SAMSUNG |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
询价 | ||
SAMSUNG |
16+ |
BGA |
4000 |
进口原装现货/价格优势! |
询价 | ||
SAMSUNG/三星 |
23+ |
TSSOP |
89630 |
当天发货全新原装现货 |
询价 | ||
SAMSUNG/三星 |
24+ |
TSOP66 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
SAMSUNG |
TSOP66 |
04+ |
53 |
全新原装进口自己库存优势 |
询价 |


