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K4H511638B-TC/LB0中文资料PDF规格书
K4H511638B-TC/LB0规格书详情
Key Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant
产品属性
- 型号:
K4H511638B-TC/LB0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
512Mb B-die DDR SDRAM Specification
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
SAMSUNG |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
询价 | ||
SAMSUNG |
20+ |
TSOP |
2960 |
诚信交易大量库存现货 |
询价 | ||
SAMSUNG/三星 |
1824+ |
TSOP |
1080 |
原装现货专业代理,可以代拷程序 |
询价 | ||
SAMSUNG |
23+ |
TSSOP |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
SAMSUNG |
04+ |
TSOP |
44 |
询价 | |||
SAMSUNG |
22+ |
TSOP |
2960 |
诚信交易大量库存现货 |
询价 | ||
SAMSUNG/三星 |
21+ |
TSOP |
1080 |
原装现货 |
询价 | ||
SAMSUNG |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
SAMSUNG/三星 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |