K41

KILOVAC High Voltage Relays

K41

包装：盒 描述：HEATER HEATER ELEMENT

K41

包装：盒 描述：HEATER HEATER ELEMENT

K41

包装：盒 描述：HEATER HEATER ELEMENT

K4100

N-Channel Silicon MOSFET General-Purpose Switching Device

Features •LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. •AdoptionofhighreliabilityHVPprocess. •AttachmentworkabilityisgoodbyMica-lesspackage. •Avalancheresistanceguarantee.

K4101

General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •High-speedswitching. •10Vdrive. •Avalancheresistanceguarantee.

K4106

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.4Ω(typ.) •Highforwardtransferadmittance:|Yfs|=8.5S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

K4107

Switching Regulator Applications

SwitchingRegulatorApplications •Lowdrain−sourceONresistance:RDS(ON)=0.33Ω(typ.) •Highforwardtransferadmittance:|Yfs|=8.5S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

K4108

Silicon N-Channel MOS Type Switching Regulator Applications

SwitchingRegulatorApplications Lowdrain−sourceONresistance:RDS(ON)=0.21Ω(typ.) Highforwardtransferadmittance:|Yfs|=14S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) Enhancementmode:Vth=2.0~4.0V(VDS=10V,ID=1mA)

K4110

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.9Ω(typ.) •Highforwardtransferadmittance:|Yfs|=5.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

K4111

Switching Regulator Applications

Features •Lowdrain-sourceONresistance:RDS(ON)=0.54Ω(typ.) •Highforwardtransferadmittance:|Yfs|=8.5S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

K4115

Switching Regulator Applications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmodel:Vth=2.0~4.0V(VDS=10V,ID=1mA)

K41B0J

GLASS PASSIVATED SINGLE

FEATURES *PlasticPackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Idealforprintedcircuitboards *Glasspassivatedchipjunction *HighSurgeCurrentCapability *HightemperatureSolderingGuaranteed260°C/10Seconds,O.375(9.5mm)leadlength

K410-222

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

K410-247

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

K410-315

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

K410-322

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

K410-327

MKT Zweipol-Funk-Entst철rkondensatoren Klasse MKT Two-pole Radio

K4107

Switching Regulator Applications

K4107

THINKISEMI 15A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs