KILOVAC High Voltage Relays

文件：392.71 Kbytes 页数：2 Pages

TEC

泰科电子

N-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

文件：56.16 Kbytes 页数：5 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features •Low ON-resistance. •High-speed switching. •10V drive. • Avalanche resistance guarantee.

文件：274.1 Kbytes 页数：5 Pages

SANYO

三洋

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：181.8 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain−source ON resistance : RDS(ON) = 0. 33 Ω(typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) • Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：268.5 Kbytes 页数：6 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications Low drain−source ON resistance : RDS (ON)= 0. 21Ω(typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

文件：286.94 Kbytes 页数：6 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：199.98 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

Features • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：246.18 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 720 V) • Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

文件：151.49 Kbytes 页数：3 Pages

TOSHIBA

东芝

GLASS PASSIVATED SINGLE

FEATURES * Plastic Package has Underwriters Laboratory Flammability Classification 94V - 0 * Ideal for printed circuit boards * Glass passivated chip junction * High Surge Current Capability * High temperature Soldering Guaranteed 260°C/10 Seconds,O.375(9. 5mm) lead length

文件：1.09312 Mbytes 页数：2 Pages

KISEMICONDUCTOR