DMMT3904WQ-7-F

Marking：K4A；Package：SOT363；40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363

Features BVCEO>40V IC=200mAHighCollectorCurrent PairofNPNTransistorsthatareIntrinsicallyMatched(Note1) 2MatchingonCurrentGain(hFE) 2mVMatchingonBase-EmitterVoltage(VBE) FullyInternallyIsolatedinaSmallSurfaceMountPackage TotallyLead-Free&Ful

DTC1D3R

Marking：K4B；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

IKN04N60RC2

Marking：K4DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features •VCE=600V •IC=4A •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature150°C •Shortcircuitcapabilityof3μs •Humidityrobustdesign •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels:htt

IKW40N120CH7

Marking：K40MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features •VCE=1200V •IC=40A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode •LowsaturationvoltageVCEsat=1.7VatTvj=25°C •Optimizedforhighefficiencyinhighsp

IKW40N120H3

Marking：K40H1203；Package：PG-TO247-3；1200V high speed switching series third generation

Features: TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt

IKWH40N65EH7

Marking：K40EEH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=40A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu

IKZA40N120CH7

Marking：K40MCH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=40A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

IKZA40N120CS7

Marking：K40MCS7；Package：PG-TO247-4-STD-NT3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=1200V •IC=40A •IGBTco-packedwithfullcurrent,softandlowQrrdiode •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Optimizedforhardswitchingtopologies(2-Linverter,3-LNPCT-type,...) •Shortcircuitruggedness8μs •Widerangeofdv/dtcontrolla

IKZA40N65EH7

Marking：K40EEH7；Package：PG-TO247-4-STD-NT3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=40A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu

KMST5551

Marking：K4N；Package：SOT-323；NPN Transistors

■Features ●SmallSurfaceMountPackage ●IdealforMediumPowerAmplificationandSwitching ●ComplementarytoMMST5401