MMDT5551DW

Marking：K4N；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching

MMST5401

Marking：K4M；Package：SOT-323；PNP Transistors

■Features ●SmallSurfaceMountPackage ●IdealforMediumPowerAmplificationandSwitching ●ComplementarytoMMST5551

MMST5401

Marking：K4M；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES ComplementarytoMMST5551 SmallSurfaceMountPackage IdealforMediumPowerAmplificationandSwitching

MMST5401

Marking：K4M；Package：SOT-323；PNP General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable(MMST5551). ●Alsoavailableinleadfreeversion. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMST5551

Marking：K4N；Package：SOT-323；NPN General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMST5401). ●Alsoavailableinleadfreeversion. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMST5551

Marking：K4N；Package：SOT-323；NPN Transistors

■Features ●SmallSurfaceMountPackage ●IdealforMediumPowerAmplificationandSwitching ●ComplementarytoMMST5401

MMST5551

Marking：K4N；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES ComplementarytoMMST5401 SmallSurfaceMountPackage IdealforMediumPowerAmplificationandSwitching

TK430A60F

Marking：K430A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=0.36Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=1.75mA)

TK49N65W

Marking：K49N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.048Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=2.5mA)

TK49N65W5

Marking：K49N65W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=145ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.051Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=