TK4A60DB

Marking：K4A60DB；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.2S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.4to4.4V(VDS=10V,ID=1mA)

TK4A80E

Marking：K4A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=2.8Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=640V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.4mA)

TK4K1A60F

Marking：K4K1A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=3.38Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=0.19mA)

TK4R9E15Q5

Marking：K4R9E15Q5；Package：TO-220；MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)Fastreverserecoverytime:trr=50ns(typ.) (2)Smallreverserecoverycharge:Qrr=50nC(typ.) (3)Smallgatecharge:QSW=26nC(typ.) (4)Lowdrain-sourceon-resistance:RD

TP0101K

Marking：K4***；Package：SOT-23；TP0101K vs. TP0101T Specification Comparison

SummaryofPerformance: TheTP0101KisatechnologyupgradewithESDprotectiontotheoriginalTP0101T.TheESDprotectiondiodesonthegateincreasesGate-BodyLeakage;otherwise,thereislittlevariationregardingperformance.

TS321AI

Marking：K402；Package：SOT-25；LOW POWER SINGLE OPERATIONAL AMPLIFIER

Description TheTS321isintendedforcost-sensitiveapplicationswherespacesavingisofgreatimportance.Thisbipolarop-ampoffersthebenefitsofareducedcomponentsize(SOT23-5package),withspecificationsthatmatch(orarebetterthan)industrystandarddevices(likethepopularLM3

TS321I

Marking：K401；Package：SOT-25；LOW POWER SINGLE OPERATIONAL AMPLIFIER

Description TheTS321isintendedforcost-sensitiveapplicationswherespacesavingisofgreatimportance.Thisbipolarop-ampoffersthebenefitsofareducedcomponentsize(SOT23-5package),withspecificationsthatmatch(orarebetterthan)industrystandarddevices(likethepopularLM3

XPH1R104PS

Marking：K4H；Package：SOP；MOSFETs Silicon N-channel MOS

Applications •Automotive •MotorDrivers •SwitchingVoltageRegulators Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=0.95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:Vth=

XPH2R404PB

Marking：K4A；Package：SOP；MOSFETs Silicon N-channel MOS

Applications •Automotive •MotorDrivers •SwitchingVoltageRegulators Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=1.8mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:Vth=2.

XPH2R404PS

Marking：K4J；Package：SOP；MOSFETs Silicon N-channel MOS

Applications •Automotive •MotorDrivers •SwitchingVoltageRegulators Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=1.8mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (5)Enhancementmode:Vth=