Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)

These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • Switching Time - Type 3㎲ • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : Typ.10 (at IF= ±10mA, VCE=10V) • Electrical Isola

文件：151.12 Kbytes 页数：3 Pages

KODENSHI

可天士

Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)

These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • Switching Time - Type 3㎲ • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : Typ.10 (at IF= ±10mA, VCE=10V) • Electrical Isola

文件：151.12 Kbytes 页数：3 Pages

KODENSHI

可天士

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1

文件：149.87 Kbytes 页数：7 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

文件：148.99 Kbytes 页数：7 Pages

NEC

瑞萨

Photocoupler

These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package.FEATURES\n• Switching Time - Type 3㎲\n• Collector-Emitter Voltage : Min.35V\n• Current Transfer Ratio : Typ.10% (at IF= ±10mA, VCE=10V)\n• Electrical Isolation Voltag • Switching Time - Type 3㎲\n• Collector-Emitter Voltage : Min.35V\n• Current Transfer Ratio : Typ.10% (at IF= ±10mA, VCE=10V)\n• Electrical Isolation Voltage : AC2500Vrms\n• Without Base Connection - K3630\n• With Base Connection - K3631;

Kodenshi-AUK

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.FEATURES\n• High voltage: VDSS = 200 V\n• Gate voltage rating: ±30 V\n• Low on-state resistance\n   • High voltage: VDSS = 200 V\n• Gate voltage rating: ±30 V\n• Low on-state resistance\n   RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A)\n• Low Ciss: Ciss = 390 pF TYP.\n• Built-in gate protection diode\n• TO-251/TO-252 package\n• Avalanche capability rated;

Renesas

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION\nThe 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.FEATURES\n• Low on-state resistance\nRDS(on)1 = 8.5 mΩ MAX. • Low on-state resistance\nRDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 32 A)\nRDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 18 A)\n• Low Ciss: Ciss = 1100 pF TYP.\n• Built-in gate protection diode;

Renesas

瑞萨

包装：散装 类别：连接器，互连器件 针座、插头和插座 描述：TERM BLOCK HDR 63POS VERT 3.5MM

Amphenol Anytek

包装：散装 类别：连接器，互连器件 针座、插头和插座 描述：TERM BLOCK HDR 63POS 90DEG 3.5MM

Amphenol Anytek

包装：散装 类别：连接器，互连器件 针座、插头和插座 描述：TERM BLOCK HDR 63POS 90DEG 3.5MM

Amphenol Anytek