SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.FEATURES\n• High voltage: VDSS = 200 V\n• Gate voltage rating: ±30 V\n• Low on-state resistance\n   • High voltage: VDSS = 200 V\n• Gate voltage rating: ±30 V\n• Low on-state resistance\n   RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A)\n• Low Ciss: Ciss = 390 pF TYP.\n• Built-in gate protection diode\n• TO-251/TO-252 package\n• Avalanche capability rated;

Renesas

瑞萨

Axis Accelerometer

文件：1.60524 Mbytes 页数：81 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3-Axis Accelerometer

文件：1.90402 Mbytes 页数：85 Pages

MEMSICMEMSIC Semiconductor (Tianjin) Co., Ltd.

美新半导体美新半导体有限公司

Lithium-ion battery charge control IC

文件：168.28 Kbytes 页数：25 Pages

MITSUMI

三美