K3635数据手册Renesas中文资料规格书

描述 Description

DESCRIPTION
The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.FEATURES
• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
• Low on-state resistance
   RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A)
• Low Ciss: Ciss = 390 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
• Avalanche capability rated

特性 Features

• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
• Low on-state resistance
   RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A)
• Low Ciss: Ciss = 390 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
• Avalanche capability rated