| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SWITCHING N-CHANNEL POWER MOSFET The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 文件:148.99 Kbytes 页数:7 Pages | NEC 瑞萨 | NEC | ||
SWITCHING N-CHANNEL POWER MOSFET The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 文件:77.2 Kbytes 页数:8 Pages | NEC 瑞萨 | NEC | ||
Silicon N Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 0.74Ω(typ.) • High forward transfer admittance: |Yfs| = S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 600 V) • Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA) 文件:226.21 Kbytes 页数:6 Pages | TOSHIBA 东芝 | TOSHIBA | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 文件:115.28 Kbytes 页数:4 Pages | FUJI 富士通 | FUJI | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 文件:114.99 Kbytes 页数:4 Pages | FUJI 富士通 | FUJI | ||
N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 文件:119.76 Kbytes 页数:4 Pages | FUJI 富士通 | FUJI | ||
Fuji Power MOSFET SuperFAP-G series Target Specification Features 1. High speed switching 2. Low on-resistance 3. No secondary breadown 4. Low driving power 5. Avalanche-proof 文件:112.67 Kbytes 页数:1 Pages | FUJI 富士通 | FUJI | ||
N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 文件:110.06 Kbytes 页数:4 Pages | FUJI 富士通 | FUJI | ||
LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c 文件:472.03 Kbytes 页数:3 Pages | SY 顺烨电子 | SY | ||
Surface Mounted Schottky Barrier Rectifiers Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Built-in strain relief,ideal for automated placement Low reverse leakage High forward surge current capability AEC-Q 101 qualified 文件:126.66 Kbytes 页数:2 Pages | GWSEMI 唯圣电子 | GWSEMI |
产品属性
- 产品编号:
K36
- 制造商:
Siemens
- 包装:
盒
- 描述:
HEATER HEATER ELEMENT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSH |
24+ |
SOD123FL |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
DIODES/SE |
19+ |
SOT23 |
20000 |
询价 | |||
DIODES/SE |
24+ |
SOT23 |
63200 |
一级代理/放心采购 |
询价 | ||
TOSH |
23+ |
SOD123FL |
120000 |
询价 | |||
GOODWORK |
50 |
询价 | |||||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
GOODWORK |
24+ |
con |
50 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
GOODWORK |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
询价 | ||
MIC/TOS |
25+ |
SOD-123FL |
90000 |
全新原装现货 |
询价 | ||
FUJI进口原 |
17+ |
TO-220F |
6200 |
询价 |
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