SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3353 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 9.5 mΩMAX. (VGS= 10 V, ID= 41 A) RDS(on)2= 14 mΩMAX. (VGS= 4 V, ID= 41 A) • Low Ciss: Ciss= 4650 pF TYP. • Built-in

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NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TY

文件：42.07 Kbytes 页数：4 Pages

NEC

瑞萨

MOS Field Effect Transistor

Features • Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TYP. • Built-in gate protection diode

文件：46.19 Kbytes 页数：1 Pages

KEXIN

科信电子

LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

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SY

顺烨电子

Logic Plus™

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