SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG= 26 nC TYP. (ID= 7.5 A, VDD= 450 V,

文件：70.8 Kbytes 页数：8 Pages

NEC

瑞萨

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

文件：949.62 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Surface Mounted Schottky Barrier Rectifiers

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Built-in strain relief,ideal for automated placement Low reverse leakage High forward surge current capability

文件：209.19 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS= 100 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：50.64 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

N-Channel 200 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC

文件：998.47 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：472.03 Kbytes 页数：3 Pages

SY

顺烨电子

Surface Mounted Schottky Barrier Rectifiers

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Built-in strain relief,ideal for automated placement Low reverse leakage High forward surge current capability AEC-Q 101 qualified

文件：126.66 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

HIGH POWER LATCHING RELAY

Application Notes 1. It is possible that during transit or final assembly the relay could change state. Therefore, it is recommended that all relays be set to the desired state via a power supply. 2. In order to maintain an “Open” or “Closed” state of the relay, the coil voltage should reach th

文件：1.30212 Mbytes 页数：4 Pages

KG

HIGH POWER LATCHING RELAY

Application Notes 1. It is possible that during transit or final assembly the relay could change state. Therefore, it is recommended that all relays be set to the desired state via a power supply. 2. In order to maintain an “Open” or “Closed” state of the relay, the coil voltage should reach th

文件：1.30212 Mbytes 页数：4 Pages

KG

HIGH POWER LATCHING RELAY

Application Notes 1. It is possible that during transit or final assembly the relay could change state. Therefore, it is recommended that all relays be set to the desired state via a power supply. 2. In order to maintain an “Open” or “Closed” state of the relay, the coil voltage should reach th

文件：1.30212 Mbytes 页数：4 Pages

KG