Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS= 100 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：50.64 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

N-Channel 200 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC

文件：998.47 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

TP3155 Time Slot Assignment Circuit

文件：208.53 Kbytes 页数：10 Pages

NSC

国半

TP3155 Time Slot Assignment Circuit

文件：208.53 Kbytes 页数：10 Pages

NSC

国半

TP3155 Time Slot Assignment Circuit

文件：208.53 Kbytes 页数：10 Pages

NSC

国半