丝印：K318；Package：CSP-14；High efficiency?갟ow noise?갅onstant large volume?갡ulti-level AGC Eighth generation Class K Audio Amplifier

文件：1.52574 Mbytes 页数：29 Pages

AWINIC

艾为电子

丝印：K310；Surface Mount Schottky Rectifiers

文件：1.23106 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：K310；Surface Mount Schottky Rectifiers

文件：1.23281 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：K312；Surface Mount Schottky Rectifiers

文件：1.23281 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：K312；Surface Mount Schottky Rectifiers

文件：1.23106 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：K315；Surface Mount Schottky Rectifiers

文件：1.23106 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：K315；Surface Mount Schottky Rectifiers

文件：1.23281 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：K317；Package：SOT-223；Three Terminal Positive Voltage Regulator

文件：262.74 Kbytes 页数：2 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description\nThe 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching\ncharacteristics, and designed for high voltage applications such as switching power supply, AC adapter. • Low gate charge\n  QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)\n• Gate voltage rating ±30 V\n• Low on-state resistance\n  RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)\n• Avalanche capability ratings;

Renesas

瑞萨

2SK3142, K3142 / Silicon N Channel MOS FET High Speed Power Switching

*  Low on-resistance RDS(on)=4mΩ typ.\n\n*  Low drive current\n\n*  4V gate drive device can be driven from 5V source

HITACHI

日立