N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10767 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description\nThe 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching\ncharacteristics, and designed for high voltage applications such as switching power supply, AC adapter. • Low gate charge\n  QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)\n• Gate voltage rating ±30 V\n• Low on-state resistance\n  RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)\n• Avalanche capability ratings;

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 21 nC

文件：351.31 Kbytes 页数：9 Pages

RENESAS

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Ultra-Low PDL Fused Tap Coupler

文件：166.99 Kbytes 页数：3 Pages

OPLINK

Ultra-Low PDL Fused Tap Coupler

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Technical reference AC Servo Motor & Driver

文件：1.86207 Mbytes 页数：27 Pages

PANASONIC

松下