N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10767 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description\nThe 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching\ncharacteristics, and designed for high voltage applications such as switching power supply, AC adapter. • Low gate charge\n  QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)\n• Gate voltage rating ±30 V\n• Low on-state resistance\n  RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)\n• Avalanche capability ratings;

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 21 nC

文件：351.31 Kbytes 页数：9 Pages

RENESAS

瑞萨

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

文件：36.63 Kbytes 页数：8 Pages

PHI

PHI

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

文件：36.63 Kbytes 页数：8 Pages

PHI

PHI

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FET

文件：1.84502 Mbytes 页数：14 Pages

ZETEX