Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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INFINEON

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HIGH SPEED IGBT IN NPT-TECHNOLOGY

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature -

文件：435.61 Kbytes 页数：14 Pages

INFINEON

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Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re

文件：214.5 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件：254.58 Kbytes 页数：6 Pages

MOTOROLA

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Short Circuit Rated IGBT

文件：565.84 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体