K30N60HS规格书供应商报价英飞凌Infineon-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
K30N60HS	文件：435.61 Kbytes Page：14 Pages	HIGH SPEED IGBT IN NPT-TECHNOLOGY HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
AIKW30N60CT	文件：1.9827 Mbytes Page：16 Pages	LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
AR30N60	文件：672.35 Kbytes Page：15 Pages	ACTIVE/SYNCHRONOUSRECTIFIER	DIODESDiodes Incorporated 达尔科技	DIODES
BIDW30N60T	文件：1.32748 Mbytes Page：10 Pages	BIDW30N60TInsulatedGateBipolarTransistor(IGBT) GeneralInformation TheBourns®ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris	BournsBourns Inc. 伯恩斯（邦士）	Bourns
DAM30N60C	文件：281.61 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM30N60F	文件：264.01 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
DAM30N60S	文件：242.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	DACO DACO	DACO
FGA30N60LSD	文件：774.14 Kbytes Page：9 Pages	MOSFETsandbipolartransistors	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGA30N60LSDTU	文件：774.14 Kbytes Page：9 Pages	MOSFETsandbipolartransistors	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH30N60LSD	文件：714.63 Kbytes Page：9 Pages	Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH30N60LSDTU	文件：714.63 Kbytes Page：9 Pages	Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGW30N60VD	文件：656.97 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)600V/30A	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
G30N60	文件：178.25 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G30N60	文件：221.78 Kbytes Page：8 Pages	60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G30N60	文件：116.91 Kbytes Page：7 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G30N60	文件：144.62 Kbytes Page：8 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G30N60	文件：105.22 Kbytes Page：7 Pages	60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G30N60	文件：191.86 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTwith TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G30N60	文件：92.78 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
G30N60	文件：100.45 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市莱克讯科技有限公司	K30N60HS	INFINEON	2017+	TO-247	65895	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市欧立现代科技有限公司	K30N60HS	YFL	22+		12	原装现货,可开13%税票	询价
深圳市百视威讯电子科技有限公司	K30N60HS		23+	N/A	13150	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	K30N60HS	英飞凌	1746+	TO247	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳市艾宇特电子科技有限公司	K30N60HS	INFINEON/英飞凌	2048+	TO247	9851	只做原装正品现货!或订货假一赔十!	询价
艾睿国际（香港）有限公司	K30N60HS	INFINEON/英飞凌	2021+	TO247	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
京海半导体(深圳)有限公司	K30N60HS	Infineon/英飞凌	21+	TO247	10000	原装现货假一罚十	询价
中科国际电子(深圳)有限公司	K30N60HS	Infineon(英飞凌)	22+	NA	7000	原厂原装现货	询价
深圳市威雅利发展有限公司	K30N60HS	ON SEMI	/	N/A	10	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市品优时代科技有限公司	K30N60HS	infineon/英飞凌	2021/2022+	NA	7000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价

更多K30N60HS供应商更新时间2024-4-30 17:01:00

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