TK35A65W5

Marking：K35A65W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=130ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.08Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=1

TK35N65W

Marking：K35N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.068Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=2.1mA)

TK35N65W5

Marking：K35N65W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=130ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.08Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TK380A60Y

Marking：K380A60Y；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA)

TK380A65Y

Marking：K380A65Y；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA)

TK39J60W5

Marking：K39J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=150ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.062Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3.0to4.5V(VDS

TK39N60W5

Marking：K39N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=150ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.062Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TK39N60X

Marking：K39N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.055Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.9mA)

TK39Z60X

Marking：K39Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.055Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.9mA)

TK3A90E

Marking：K3A90E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=3.7Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=720V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.25mA)