SK320BF

Marking：K320B；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES ♦Metalsiliconjunction,majoritycarrierconduction ♦Forsurfacemountedapplications ♦Lowpowerloss,highefficiency ♦Highforwardsurgecurrentcapability ♦Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplicatlons

SK32BF

Marking：K32B；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES ♦Metalsiliconjunction,majoritycarrierconduction ♦Forsurfacemountedapplications ♦Lowpowerloss,highefficiency ♦Highforwardsurgecurrentcapability ♦Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplicatlons

SK34BF

Marking：K34B；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES ♦Metalsiliconjunction,majoritycarrierconduction ♦Forsurfacemountedapplications ♦Lowpowerloss,highefficiency ♦Highforwardsurgecurrentcapability ♦Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplicatlons

SK36BF

Marking：K36B；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES ♦Metalsiliconjunction,majoritycarrierconduction ♦Forsurfacemountedapplications ♦Lowpowerloss,highefficiency ♦Highforwardsurgecurrentcapability ♦Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplicatlons

SK38BF

Marking：K38B；Package：SMBF；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES ♦Metalsiliconjunction,majoritycarrierconduction ♦Forsurfacemountedapplications ♦Lowpowerloss,highefficiency ♦Highforwardsurgecurrentcapability ♦Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplicatlons

TK31J60W5

Marking：K31J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.082Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3.0to4.5V(VDS

TK31N60W5

Marking：K31N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.082Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

TK31N60X

Marking：K31N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TK31Z60X

Marking：K31Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TK35A65W

Marking：K35A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.068Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=2.1mA)