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K260

HIGH VOLTAGE BIDIRECTIONAL TRIGGER DIODE

文件:2.41768 Mbytes 页数:3 Pages

NIUHANG

纽航电子

K2600G

丝印:DB260BW;Package:DO-15;Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件:3.6673 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

K2600SA

丝印:K26S;Package:SMA;Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件:2.96257 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

K2600SB

丝印:K26S;Package:DO-214AA;Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件:2.8523 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

K2600SD1

丝印:K26S;Package:SOD-123FL;Sidac

Features Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors

文件:2.80869 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

K2600G

Sidac

文件:896.72 Kbytes 页数:3 Pages

UNSEMI

优恩半导体

K2600SA

Sidac

文件:944.28 Kbytes 页数:4 Pages

UNSEMI

优恩半导体

K2600SB

Sidac

文件:902.6 Kbytes 页数:4 Pages

UNSEMI

优恩半导体

K2600SD1

Sidac

文件:1.04861 Mbytes 页数:4 Pages

UNSEMI

优恩半导体

K2600SD1

Sidac

文件:927.06 Kbytes 页数:4 Pages

UNSEMI

优恩半导体

技术参数

  • VBO(V)Max:

    270

  • VDRM(V)Min:

    220

  • IDRM(uA)Max:

    1

  • VTM(V)Max:

    2.0

  • IH(mA)Max:

    50

供应商型号品牌批号封装库存备注价格
PLINGSEMIC
23+
SOD-123FL
50000
全新原装正品现货,支持订货
询价
PLINGSEMIC
25+
SOD-123FL
10000
原装现货假一罚十
询价
PLINGSEMIC
23+
SOD-123FL
8000
只做原装现货
询价
日立HITACHI
23+24
TO-3
9860
原厂原包装。终端BOM表可配单。可开13%增值税
询价
PLINGSEMIC
23+
SOD-123FL
7000
询价
PLINGSEMIC
24+
SOD-123FL
60000
询价
TOS
25+
TO-3P
18000
原厂直接发货进口原装
询价
TOSHIBA
25+
DIP
145
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TOS
24+
TO-220-3
8866
询价
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
更多K260供应商 更新时间2026-1-17 10:59:00