丝印：K25；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIERRECTIFIER

Features « Low power loss, high efficiency « High forward surge current capability + High Current Capability + For surface mounted applications + Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C Applications. These Schottky barrier diodes are designed for high speed switching. ap

文件：942.77 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：K25；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：K25；Package：SMT3；100mA / 50V Digital transistors (with built-in resistors)

Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making the device design easy.

文件：95.2 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：K25；Package：SOT-323；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

Features 1) Built-In Biasing Resistors, R = 22kΩ

文件：1.23577 Mbytes 页数：7 Pages

ROHM

罗姆

丝印：K25；Package：UMT3；100mA / 50V Digital transistors (with built-in resistors)

Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making the device design easy.

文件：95.2 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：K25；Package：SMT3；100mA / 50V Digital transistors (with built-in resistors)

文件：142.18 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：K25；Package：UMT3；100mA / 50V Digital transistors (with built-in resistors)

文件：142.18 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：K2503；Package：SOT-428；Small switching (60V, 5A)

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：135.78 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：K2504；Package：SOT-428；Small switching (100V, 5A)

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：134.2 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：K2504；Package：SOT-428；4V Drive Nch MOS FET

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：95.66 Kbytes 页数：6 Pages

ROHM

罗姆