Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

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Switching Regulator Applications

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丝印：K20A60U；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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丝印：K20A60W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

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丝印：K20A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

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丝印：K20A60U；Switching Regulator Applications

文件：280.34 Kbytes 页数：6 Pages

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