MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

文件：248.86 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K20A60W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

文件：248.86 Kbytes 页数：10 Pages

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丝印：K20A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：239.33 Kbytes 页数：10 Pages

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FRD - Low Forward Voltage Drop

For Power Factor Improvement High Frequency Rectification FEATURES * Similar to TO-247AC Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability

文件：45.19 Kbytes 页数：5 Pages

NIEC

FRED

文件：125.72 Kbytes 页数：1 Pages

NI

恩艾

Power Schottky Rectifier - 20Amp 60Volt

文件：133.31 Kbytes 页数：3 Pages

SIRECT

矽莱克半导体