TK2R9E10PL

Marking：K2R9E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.4mΩ(typ.)(VGS

TPESD63211N

Marking：K2P；Package：DFN1006-2；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features oLowoperatingvoltage:3.3V/ oUltralowcapacitance:0.4pF(Typ) Ultralowleakage:nAlevel oLowclampingvoltage o—IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV Contactdischarge:+30kV —IEC61000-4-4(EFT)40A(5/50ns) —IEC61000-4-5(Lightning)8A(8/20ps) o2-pi

TSB511ILT

Marking：K232；Package：SOT23-5；Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features •Rail-to-railinputandoutput •Lowoffsetvoltage:1.5mVmaximum •Widesupplyvoltagerange:2.7Vto36V •Gainbandwidthproduct:6MHz •Slewrateof3V/μs •Lownoise:12nV/√Hz •IntegratedEMIfilter •2kVHBMESDtolerance •Extendedtemperaturerange:-40°Cto+

TSB511IYLT

Marking：K233；Package：SOT23-5；Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features •Rail-to-railinputandoutput •Lowoffsetvoltage:1.5mVmaximum •Widesupplyvoltagerange:2.7Vto36V •Gainbandwidthproduct:6MHz •Slewrateof3V/μs •Lownoise:12nV/√Hz •IntegratedEMIfilter •2kVHBMESDtolerance •Extendedtemperaturerange:-40°Cto+

TSB512IST

Marking：K232；Package：MiniSO8；Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features •Rail-to-railinputandoutput •Lowoffsetvoltage:1.5mVmaximum •Widesupplyvoltagerange:2.7Vto36V •Gainbandwidthproduct:6MHz •Slewrateof3V/μs •Lownoise:12nV/√Hz •IntegratedEMIfilter •2kVHBMESDtolerance •Extendedtemperaturerange:-40°Cto+

TSB512IYST

Marking：K233；Package：MiniSO8；Rail-to-rail inputs and outputs, 36 V, 6 MHz op amps

Features •Rail-to-railinputandoutput •Lowoffsetvoltage:1.5mVmaximum •Widesupplyvoltagerange:2.7Vto36V •Gainbandwidthproduct:6MHz •Slewrateof3V/μs •Lownoise:12nV/√Hz •IntegratedEMIfilter •2kVHBMESDtolerance •Extendedtemperaturerange:-40°Cto+

TSB582IDT

Marking：K2H；Package：SO8；200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features •Widesupplyvoltage:4V-36V •Highoutputcurrent200mA •Rail-to-railoutput,lowrailinput •Gainbandwidthproduct:3.1MHz •Highslewrate:2V/μs •Internalthermalshutdown&outputcurrentlimiter •EnhancedRFnoiseimmunity •HightolerancetoESD:4kVHBM •Ex

TSB582IQ2T

Marking：K2H；Package：DFN8；200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features •Widesupplyvoltage:4V-36V •Highoutputcurrent200mA •Rail-to-railoutput,lowrailinput •Gainbandwidthproduct:3.1MHz •Highslewrate:2V/μs •Internalthermalshutdown&outputcurrentlimiter •EnhancedRFnoiseimmunity •HightolerancetoESD:4kVHBM •Ex

TSB582IYDT

Marking：K2I；Package：SO8；200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features •Widesupplyvoltage:4V-36V •Highoutputcurrent200mA •Rail-to-railoutput,lowrailinput •Gainbandwidthproduct:3.1MHz •Highslewrate:2V/μs •Internalthermalshutdown&outputcurrentlimiter •EnhancedRFnoiseimmunity •HightolerancetoESD:4kVHBM •Ex

TSB582IYQ2T

Marking：K2I；Package：DFN8；200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features •Widesupplyvoltage:4V-36V •Highoutputcurrent200mA •Rail-to-railoutput,lowrailinput •Gainbandwidthproduct:3.1MHz •Highslewrate:2V/μs •Internalthermalshutdown&outputcurrentlimiter •EnhancedRFnoiseimmunity •HightolerancetoESD:4kVHBM •Ex