丝印：K2；Package：TSSOP6；High voltage double diode

1. General description The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small plastic SMD package • High switching speed: max.

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NEXPERIA

安世

High voltage double diode

The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 Surface-Mounted Device (SMD) plastic package. • Small plastic SMD package\n• High switching speed: max. 50 ns\n• High continuous reverse voltage: 300 V\n• Electrically insulated diodes\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

HIGH VOLTAGE DUAL SWITCHING DIODE

Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V

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DIODES

美台半导体

Baseboard for TMCM-101

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TRINAMIC

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

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RENESAS

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