MMSTA63

Marking：K2E；Package：SOT-323；PNP Surface Mount Darlington Transistor

Features ●EpitaxialPlanarDieConstruction ●IdealforMediumPowerAmplificationandSwitching ●HighCurrentGain

QS6K21

Marking：K21；Package：TSMT6；2.5V Drive Nch MOSFET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

QS8K21

Marking：K21；Package：TSMT8；4V Drive Nch Nch MOSFET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

SBR2M60S1F

Marking：K26H；Package：SOD-123FL；Super Barrier Rectifier

Features Idealforautomatedplacement SuperiorReverseAvalancheCapability 175°COperationJunctionTemperature Lowpowerloss,highefficiency,HighReliability Hightemperaturesolderingguaranteed: 260°C/10seconds Componentinaccordanceto RoHS2011/65/EUandWEEE2002/96/EC

TK200A65Z5

Marking：K200A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=95ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.154Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=0.61

TK200E65Z5

Marking：K200E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=95ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.154Ω(typ.) (3)High-speedswitchingpropertieswithlowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=0.61mA)

TK200U65Z5

Marking：K200U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=95ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.154Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=0.61

TK20A60U

Marking：K20A60U；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.165Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=12S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TK20A60W

Marking：K20A60W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA)

TK20A60W5

Marking：K20A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.15Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=