K10A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en •Lowdrain-sourceON-resistance:RDS(ON)=0.62Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500

S10A50

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

S10A50PT

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE30-60VoltsCURRENT10Amperes FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *MetalSiliconjunction,majoritycarrierconduction *Lowpowerloss,highefficiency *Highcurrentcapability,lowforwardvoltagedrop *Guardringforo

TK10A50D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK10A50D

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en •Lowdrain-sourceON-resistance:RDS(ON)=0.62Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500

TK10A50D

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.62Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TK10A50D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK10A50W

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TK10A50W

iscN-ChannelMOSFETTransistor

U10A50

FASTRECTIFIERS(10A,300-600V)

UltraFastRecoveryRectifierDiodes ULTRAFASTRECTIFIERS10AMPERES300--600VOLTS