SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

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MOSPEC

统懋

Schottky Diode

Mospec

统懋

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 30 - 60 Volts CURRENT 10 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction * Low power loss,high efficiency * High current capability, low forward voltage drop * Guardring for o

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CHENMKO

力勤

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en • Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 500

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电