FULLY AUTOPROTECTED POWER MOSFET

文件：399.78 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

文件：511.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

ST

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Discrete Diodes

文件：127.42 Kbytes 页数：1 Pages

SIRECTIFIER

矽莱克电子

10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes

文件：406.19 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp

文件：159.09 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体