丝印：K040N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

文件：479.13 Kbytes 页数：10 Pages

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

文件：479.13 Kbytes 页数：10 Pages

TOSHIBA

东芝

N-Channel Enhancement Mode Power MOSFET

Description The GC040N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：981 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

TO-220F

TOSHIBA/东芝

上传：深圳庞田科技有限公司

TO-220F

TOSHIBA/东芝

上传：深圳庞田科技有限公司