丝印：K04；Package：TUMT6；1.8V Drive NchNch MOSFET

文件：96.18 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：K04；Package：TUMT6；1.8V Drive NchNch MOSFET

文件：77.2 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：K04WY；Package：TSSOP8；Low-power dual operational amplifier

Description This circuit consists of two independent, high gain operational amplifiers (op amps) that have frequency compensation implemented internally. They are designed specifically for automotive and industrial control systems. The circuit operates from a single power supply over a wide ra

文件：1.10942 Mbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：K040N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.4 mA)

文件：742.11 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K040N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

文件：479.13 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K040Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.4 mA)

文件：764.84 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K040Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)

文件：419.54 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K042N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 160 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.035 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 2.85 mA

文件：762.5 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K04228NKD；Package：WQFN；LMK04228 Ultra-Low Noise, JESD204B-Compliant Clock Jitter Cleaner With Dual-Loop PLLs

文件：1.7168 Mbytes 页数：91 Pages

TI

德州仪器

丝印：K04228NKD；Package：WQFN；LMK04228 Ultra-Low Noise, JESD204B-Compliant Clock Jitter Cleaner With Dual-Loop PLLs

文件：1.7168 Mbytes 页数：91 Pages

TI

德州仪器