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MMD65R600QRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7.3A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD65R600QRH

650V0.60ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF65R600Q

650V0.60ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF65R600QTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7.3A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMF65R600QTH

650V0.60ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

TPA65R600C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光国微紫光国芯微电子股份有限公司

TPA65R600C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光国微紫光国芯微电子股份有限公司

TPB65R600C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光国微紫光国芯微电子股份有限公司

TPB65R600C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光国微紫光国芯微电子股份有限公司

TPC65R600C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光国微紫光国芯微电子股份有限公司

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