丝印：JS；Package：SOD-123；High Voltage switching Diode

文件：117.49 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：JS；Package：SMA；5.0 to 440Volts 400Watts SMD TRANSIENT VOLTAGE SUPPRESSORS

文件：298.7 Kbytes 页数：5 Pages

ZSELEC

淄博圣诺

丝印：JS；Package：WSON；TPS3703 High Accuracy Overvoltage and Undervoltage Reset IC With Time Delay and Manual Reset

文件：2.88646 Mbytes 页数：36 Pages

TI

德州仪器

丝印：JS；Package：WSON；TPS3703 High Accuracy Overvoltage and Undervoltage Reset IC With Time Delay and Manual Reset

文件：3.11391 Mbytes 页数：40 Pages

TI

德州仪器

丝印：JS65R360FU；Package：TO-220MF-K2；N-CHANNEL MOSFET

文件：727.24 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：361.52 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：361.45 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：361.75 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：362.27 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

文件：361.91 Kbytes 页数：2 Pages

ISC

无锡固电