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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
PHB50N03LT	文件：344.71 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
PHB50N03T	文件：63.66 Kbytes Page：7 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PHB50N03T	文件：344.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
PHD50N03LT	文件：108.76 Kbytes Page：11 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PHD50N03LT	文件：298.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
PHD50N03LTA	文件：1.01774 Mbytes Page：8 Pages	N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
PHP50N03LT	文件：1.13625 Mbytes Page：10 Pages	N-Channel30V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
PHP50N03LT	文件：108.76 Kbytes Page：11 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PHP50N03LT	文件：371.69 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
PHP50N03T	文件：59.48 Kbytes Page：7 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	JMTK50N03A	捷捷微	2021+	SOT-252	9000	原装现货,随时欢迎询价	询价
深圳市仟禧电子有限公司	JMTK50N03A	捷捷微	22+	SOT-252	20000	深圳原装现货正品有单价格可谈	询价
深圳市威尔健半导体有限公司	JMTK50N03A	捷捷微	23+	SOT-252	9000		询价
深圳市晨豪科技有限公司	JMTK50N03A	捷捷微	23+	TO-252	89630	当天发货全新原装现货	询价
深圳市明嘉莱科技有限公司	JMTK50N03A	捷捷微	20182019	SOT-252	880000	明嘉莱只做原装正品现货	询价
深圳市得捷芯城科技有限公司	JMTK50N03A	捷捷微	24+	NA/	9000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市星辰微电科技有限公司	JMTK50N03A	捷捷微	23+	TO-252-3L	68000	捷捷微全系列供应,支持终端生产	询价
深圳市芯皇电子有限公司	JMTK50N03A	捷捷微	23+	TO-252-3L	50000	专业配单,原装正品假一罚十,代理渠道价格优	询价
富凯科技(深圳）有限公司	JMTK50N03A	捷捷微	24+	SOT-252	9000	只做原装，欢迎询价，量大价优	询价
现代芯城（深圳）科技有限公司	JMTK50N06B		24+	N/A	53000	一级代理-主营优势-实惠价格-不悔选择	询价

更多JMTK50N03A供应商更新时间2025-7-18 14:00:00

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