首页 >JMTK110N06A>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

HY110N06T

55V/110AN-ChannelEnhancementModeMOSFET

55V,RDS(ON)=5.5mW@VGS=10V,ID=30A Features •LowOn-StateResistance •ExcellentGateChargexRDS(ON)Product(FOM) •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforDC-DCConverter,Off-lineUPS,AutomotiveSystem,SolenoidandMotorControl •I

HY

HY ELECTRONIC CORP.

IPB110N06L

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB110N06LG

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB110N06L-G

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP110N06L

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP110N06LG

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP110N06L-G

OptiMOS짰Power-Transistor

Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IXFK110N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=110A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK110N06

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching

IXYS

IXYS Corporation

TSM110N06

55VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

供应商型号品牌批号封装库存备注价格
捷捷微
23+
TO-252-3L
68000
捷捷微全系列供应,支持终端生产
询价
捷捷微
23+
TO-252-3L
50000
专业配单,原装正品假一罚十,代理渠道价格优
询价
JJW
2344
TO-252-3L
20000
原装正品价格优惠,志同道合共谋发展
询价
JJM
24+
TO-252-3L
12500
只做原装正品现货欢迎来电查询15919825718
询价
JJW捷捷微
25+
TO-252
1560
原厂原装,价格优势
询价
JJW
2238
TO-252
30314
原装现货实单支持
询价
JJW/捷捷微
22+
TO-252
59959
原装正品
询价
JJW
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
询价
JJW
2222
TO-252
59959
全新原装
询价
JJW
24+
TO-252
10000
只有原装
询价
更多JMTK110N06A供应商 更新时间2025-5-21 14:12:00