OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

文件：448.32 Kbytes 页数：10 Pages

INFINEON

英飞凌

OptiMOS® Power-Transistor

Infineon

英飞凌

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching

文件：156.88 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：328.41 Kbytes 页数：2 Pages

ISC

无锡固电

55V N-Channel Power MOSFET

文件：107.28 Kbytes 页数：6 Pages

TSC

台湾半导体