55V / 110A N-Channel Enhancement Mode MOSFET

55V, RDS(ON)=5.5mW@VGS=10V, ID=30A Features • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control • I

文件：252.38 Kbytes 页数：4 Pages

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虹扬科技

55V / 110A N-Channel Enhancement Mode MOSFET

55V, RDS(ON)=5.5mW@VGS=10V, ID=30A • Low On-State Resistance\n• Excellent Gate Charge x RDS(ON) Product ( FOM )\n• Fully Characterized Avalanche Voltage and Current\n• Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control\n• In compliance with EU RoHs 2002/95/EC DirectivesMechanical Info;

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虹扬科技

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

文件：448.32 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

文件：448.32 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

文件：448.32 Kbytes 页数：10 Pages

Infineon

英飞凌