N-Channel Enhancement Mode MOSFET

Features · V/ 5A, RDS(ON) =10.5 mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

文件：919.74 Kbytes 页数：10 Pages

HOOYI

后羿半导体

丝印：HY1506P；Package：TO220-3L；N-Channel Enhancement Mode MOSFET

Features · V/ 5A, RDS(ON) =10.5 mW (typ.) @ VGS =10V · Avalanche Rated · Reliable and Rugged · Lead Free andGreenDevicesAvailable (RoHS Compliant) Applications · Power Management for Inverter Systems.

文件：919.74 Kbytes 页数：10 Pages

HOOYI

后羿半导体

Current Transducers HY 5 to 25-P

For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). Features · Hall effect measuring principle · Galvanic isolation between primary and secondary circui

文件：109.78 Kbytes 页数：2 Pages

LEM

莱姆

丝印：HY1503；Package：DFN3-8L；Single N-Channel Enhancement Mode MOSFET

文件：679.38 Kbytes 页数：9 Pages

HUAYI

华羿微电

丝印：HY1504；Package：TO-252-2L；N-Channel Enhancement Mode MOSFET

文件：1.21468 Mbytes 页数：11 Pages

HUAYI

华羿微电

丝印：HY1504；Package：TO-251-3L；N-Channel Enhancement Mode MOSFET

文件：1.21468 Mbytes 页数：11 Pages

HUAYI

华羿微电

丝印：HY1504；Package：TO-251-3S；N-Channel Enhancement Mode MOSFET

文件：1.21468 Mbytes 页数：11 Pages

HUAYI

华羿微电

丝印：HY1506；Package：TO-263-2L；N-Channel Enhancement Mode MOSFET

文件：584 Kbytes 页数：12 Pages

HUAYI

华羿微电

丝印：HY1506；Package：PPAK5-8L；Single N-Channel Enhancement Mode MOSFET

文件：429.83 Kbytes 页数：9 Pages

HUAYI

华羿微电

丝印：HY1506；Package：TO-252-2L；N-Channel Enhancement Mode MOSFET

文件：991.66 Kbytes 页数：12 Pages

HUAYI

华羿微电